Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.These facet-coated devices also operated at room temperature at a wavelength of 535 nm (green). Figure 4a shows ... K Figure 4. a.) L-I characteristic for a green laser diode at room temperature, b. ... 1 Schematic diagram of the epitaxial layer.


Title:Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Author: Stringfellow
Publisher:CRC Press - 1992-01-01
ISBN-13:

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